(Princeton Infrared Technologies: Monmouth Junction, NJ) -- Princeton Infrared Technologies Inc. (PIRT), global experts, and innovators in indium gallium arsenide (InGaAs) imaging technology, announced it has been selected by the U.S. Air Force for a Phase II SBIR contract. This program will focus on the development of advanced concepts and an improved capability to hybridize heterogeneous, large-format semiconductor materials, at the wafer level, for next-generation U.S. Department of Defense (DoD) visible (VIS) and infrared (IR) focal plane arrays (FPAs).

One of the program goals will be developing wafer-scale hybridization of mixed material types (e.g., Si [silicon] and III-Vs) to build large area imaging devices. This will be a significant improvement over the current, costly methodology needed to produce large area FPAs using indium bump technology. PIRT will use wafer-bond technology to attach an infrared detector wafer to an Si readout integrated circuit (ROIC) to form an FPA. PIRT will utilize a 1280 x 1024, 10µm pitch ROIC and hybridize 100 mm detector wafers to assess the device’s yield across multiple 1280 x 1024 FPAs to determine projections for a larger 4k x 4k device.

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