(Nova: Rehovot, Israel) -- Nova, a leading innovator in metrology and process control solutions for advanced semiconductor manufacturing, has announced the adoption of its Nova Metrion platform by global leaders in memory and logic device production. The platform was purchased for gate-all-around (GAA) and advanced DRAM device production, enabling customers to accelerate performance and yield.

This achievement marks a significant milestone in Nova Metrion’s market. By securing adoption for both GAA and advanced DRAM processes, Nova expands its materials metrology footprint in two of the most critical technology inflections driving semiconductor growth today.

“The adoption of Nova Metrion by leading global manufacturers underscores Nova’s commitment to enabling the industry’s most advanced technology transitions,” says Gaby Waisman, Nova president and CEO. “Our solutions continue to play a pivotal role in supporting innovation across both logic and memory segments. This milestone reflects the strength of Nova’s portfolio and its alignment to our customers’ needs. We remain focused on delivering sustainable growth through technology leadership.”

Nova Metrion is the first fully automated secondary ion mass spectrometry system validated for in-line production process control. Enabling full-wafer mapping, the platform shortens time to feedback and delivers rapid ROI by identifying process excursions in near-real time to prevent scrap and expensive rework. Time-sensitive information is critical for statistical process control. Nova Metrion uniquely addresses this need by carrying out repetitive measurements, typically done in the lab, within the fab.

The system is engineered to deliver high-precision metrology results for process control of complex films stacks for both logic and memory devices. Measuring the precise concentration of chemical species as a function of depth, Nova Metrion generates compositional profiles that can be used to monitor and control various important properties, including dopant concentration, implant uniformity, and contamination levels.